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Atomistic Simulation of Silicon Grain Boundaries*

Published online by Cambridge University Press:  26 February 2011

S. R. Phillpot  and
D. Wolf
S. R. Phillpot
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
D. Wolf
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
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Abstract

The bond-bending and bond-stretching three-body potential of Stillinger and Weber is used to study the energy and structure of grain boundaries in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 103
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Work supported by the U.S. Department of Energy, BES-Materials Sciences, under Contract W-31-109-Eng-38.

References

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