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Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures
Published online by Cambridge University Press: 10 February 2011
Abstract
Ballistic-electron-emission microscopy (BEEM) has been used to study band-offsets in n-and p-type GaInP/GaAs heterostructures. We determine room temperature offsets of 30 meV and 350 meV in the conduction and valence bands, respectively, for thin GaInP layers grown by metal-organic chemical vapor deposition (MOCVD) at 610°C. Low temperature (77 K) measurements also indicate at least 90% of the band discontinuity lies in the valence band for these ordered GaInP samples.
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