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The Benefits of High-K dielectrics for Polymer TFTs

Published online by Cambridge University Press:  11 February 2011

Munira Raja ,
Naser Sedghi ,
Simon J. Higgins  and
W. Eccleston
Munira Raja
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
Naser Sedghi
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
Simon J. Higgins
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool L69 3BX, UK
W. Eccleston
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
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Abstract

An increasing range of high-K dielectric is becoming available and it is very worth considering incorporating them into polymer TFTs. One of the benefits is that if metal gates are used then aqueous anodisation provides a very simple approach that is compatible with solution based processing. The details of this process are described. High-K dielectrics reduce threshold voltage and, therefore, increase switching speed. Of particular importance is the problem of bias instability. All the results involve the fractionation and controlled doping of poly-3-hexylthiophene.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 734: Symposia A/B – Defect-Mediated Phenomena in Ordered Polymers – Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers , 2002 , B9.1
Copyright
Copyright © Materials Research Society 2003

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References

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