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Blue Luminescence from SiOx Films Containing Ge Nanocrystals

Published online by Cambridge University Press:  15 February 2011

M. Zacharias ,
R. Weigand ,
J. Bläsing  and
J. Christen
M. Zacharias
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
R. Weigand
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
J. Bläsing
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
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Abstract

We present a systematic analysis of SiOx alloys films containing Ge nanocrystals prepared by dc magnetron sputtering. Increasing the sputtering power (50–175W) reduces the average Ge nanocrystal size exponentially down to ∼2nm. Broad band photoluminescence spectra are observed in the visible at room temperature centered at ∼3eV or/and ∼2eV. Neither the 3eV nor the 2eV luminescence can be correlated to the change in the size. Excluding the quantum-confined origin, the presence of a luminescence center located in the inhomogeneous strain field of the Ge nanocrystal surface is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 117
Copyright
Copyright © Materials Research Society 1997

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Footnotes

*

present address: Department of Electrical Engineering, University of Rochester, Rochester, N.Y. 14627, USA

References

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