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Buffer Assisted Epitaxial Growth of Bi1.5Zn1Nb1.5O7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications

Published online by Cambridge University Press:  11 July 2012

Krishnaprasad Sasi ,
Sebastian Mailadil ,
Fredy Rojas ,
Aldrin Antony  and
Jayaraj Madambi
Krishnaprasad Sasi
Affiliation:
Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, India.
Sebastian Mailadil
Affiliation:
National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala, India.
Fredy Rojas
Affiliation:
Department of Applied Physics and Optics, University of Barcelona, Barcelona, Spain.
Aldrin Antony
Affiliation:
Department of Applied Physics and Optics, University of Barcelona, Barcelona, Spain.
Jayaraj Madambi
Affiliation:
Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, India.
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Abstract

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

Keywords

dielectric propertiesepitaxythin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1454: Symposium HH – Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems , 2012 , pp. 183 - 188
Copyright
Copyright © Materials Research Society 2012

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References

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