Hostname: page-component-84b7d79bbc-4hvwz Total loading time: 0 Render date: 2024-07-26T18:49:01.516Z Has data issue: false hasContentIssue false
  • English
  • Français

Cadmium Sulfide Films Deposited by Cw Laser Evaporation Technique

Published online by Cambridge University Press:  10 February 2011

R. W. Moss ,
J. Harris ,
D. H. Lee ,
R. A. Condrate ,
X. W. Wang ,
S. M. Stoltz  and
A. Petrou
R. W. Moss
Affiliation:
Alfred University, Alfred, NY 14802
J. Harris
Affiliation:
Alfred University, Alfred, NY 14802
D. H. Lee
Affiliation:
Alfred University, Alfred, NY 14802
R. A. Condrate
Affiliation:
Alfred University, Alfred, NY 14802
X. W. Wang
Affiliation:
Alfred University, Alfred, NY 14802
S. M. Stoltz
Affiliation:
State University of New York, Buffalo, NY 14260
A. Petrou
Affiliation:
State University of New York, Buffalo, NY 14260
Get access

Abstract

Cadmium Sulfide (CdS) thin films had been fabricated by a laser deposition technique. Our previous results indicated that the hexagonal structured films could be formed at a substrate temperature of 400 C or higher. Reducing the temperature to 200 C or lower, cubic dominant films had been fabricated. To further understand the effects of other deposition parameters, CdS films were deposited at 30 C in this study. Crystal structures of the films were analyzed by Xray diffraction (XRD) and Transmission Electron Microscopy (TEM). It was found that the processing windows for the cubic films were very limited. As revealed by optical transmission measurements, the optical absorption edge of the cubic film was different from that of the hexagonal film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 567
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cardona, R., Weinstein, M., and Wolff, G. A., Phys. Rev., 140 (1965) 633. Weinstein, M., Wolff, G. A., and Das, B. N., Appl. Phys. Lett., 73 (1965),Google Scholar
2. Kwok, H.S., Zheng, J.P., Witanachchi, S., Mattocks, P., Shi, L., Ying, Q.Y., Wang, X.W., and Shaw, D.T., Appl. Phys. Lett., 52 (1988) 1095.Google Scholar
3. Wang, X.W., Spitulnik, F., Campbell, B., Noble, R., Hapanowicz, R.P., and Condrate, R.A. Sr., Thin Solid Films, 218 (1992) 157.Google Scholar
4. Spitulnik, F., Wang, X. W., Noble, R., Finnigan, D. J., Amarakoon, V. R. W., and Snyder, R. L., J. of Mat. Synthesis and Processing, 1, (1993) 335.Google Scholar
5. Wang, X.W., Finnigan, D.J., Noble, R., and Mattocks, P., Mat. Res. Soc. Symp. Proc., 281 (1993) 591.Google Scholar
6. WoWang, X., and Finnigan, D. J., SPIE Proceedings Series, 57 (1993) 1856.Google Scholar