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Characteristics of Pdai Schottky Contacts to n-GaAs

Published online by Cambridge University Press:  21 February 2011

T.S. Huang  and
J.G. Pang
T.S. Huang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of, China
J.G. Pang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of, China
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Abstract

Metallurgical and electrical properties of β-phase PdAl Schottky metallizations on n-GaAs after rapid thermal annealing for 20 s in the temperature range 500-1000°C have been investigated using x-ray diffraction, transmission electron microscopy, Auger depth profiling and current-voltage measurement. The Al-rich contacts were stable up to 900°C, whereas the Pdrich contacts were less stable. The thermal stability of Pd-rich contacts decreased with increasing Pd composition, and interfacial reaction after high temperature annealing resulted in the formation of PdGa compound. The interface between Al-rich PdAI and GaAs substrate was quite sharp even after 900°C anneal. The Schottky barrier heights of Al-rich PdAl contacts increased with annealing temperature. The barrier height enhancement in the annealed Al-rich contacts can be attributed to the thin AlxGal−xAs layer formed at the interface between PdAl and GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 87
Copyright
Copyright © Materials Research Society 1994

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