Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-22T22:47:19.432Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Conductive RuO2 Thin Film as Bottom electrodes for Ferroelectric Thin Films

Published online by Cambridge University Press:  21 March 2011

S. Bhaskar ,
P. S. Dobal ,
S. B. Majumder  and
R. S. Katiyar
S. Bhaskar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931
P. S. Dobal
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931
S. B. Majumder
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931
Get access

Abstract

Ruthenium Oxide (RuO2) thin films were prepared on silicon substrates by solution chemistry technique. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), micro-Raman, X-ray photoelectron spectroscopy (XPS), and four probe Van-der-paw technique were used for the film characterization. X-ray analysis shows a rutile structure in these films. The films annealed at 700°C showed lowest resistivity of 29 × 10−5 ohm-cm. The presence of Eg, A1g, and B2g modes is consistent with the Raman spectrum of rutile phase. These modes as well as additional unidentified band at about 477 cm−1 were investigated by temperature dependent Raman studies. Based on the result, band at 477 cm−1 that disappears above 370 K is attributed to hydrated RuO2 present in the films. XPS analysis show stoichiometric rutile RuO2 present in the films. Small concentrations of RuCl3, RuO3 and hydrated RuO2 were also detected. Pb0.9La0.15TiO3 (PLT15) thin films were deposited on RuO2/Si substrates and characterized for its ferroelectric properties to demonstrate that solution deposition technique offers an alternative approach for preparing high quality RuO2 bottom electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC4.7.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Teowee, G., Boulton, J. M., Hassan, S., McCarthy, K., McCarthy, F., Bukowski, T. J., Alexander, T. P., and Uhlmann, D. R., Int. Ferroelectrics 18, 287 (1997).10.1080/10584589708221706Google Scholar
2. Krusin-Elbaum, L., Wittmer, M., and Yee, D. S., Appl. Phys. Lett. 50, 1879 (1987).10.1063/1.97673Google Scholar
3. Kolawa, E., So, F. C. T., Flick, W., Zhao, X.-A, Pan, E. T-S, and Nicolet, M. A., Thin Solid Films 173, 217 (1989).Google Scholar
4. Jia, Q. X., Song, S. G., Foltyn, S. R., and Wu, X. D., J. Mater. Res. 10, 2401 (1995).10.1557/JMR.1995.2401Google Scholar
5. Green, M. L., Cross, M. E., Papa, L. E., Schnoes, K. J., and Brasen, D., J. Electrochem. Soc. 132, 2677 (1985).10.1149/1.2113647Google Scholar
6. Bhaskar, S., Majumder, S. B., Dobal, P. S., Katiyar, R. S., Cruz, A. L. Morales, and Fachini, E. R., Proceedings of Materials Research Society Symposium vol 606, 69 (2000).Google Scholar
7. Cullity, D., Elements of X-ray diffraction (Addition-Wesley publishing Co., Inc USA 1967) p261.Google Scholar
8. Malek, J., Watanabe, A., and Mitsuhashi, T., Thermochim. Acta, 282/283, 131 (1996).10.1016/0040-6031(96)02887-0Google Scholar
9. Mar, S. Y., Chen, C. S., Huang, Y. S., and Tiong, K. K., Appl. Surf. Sci. 90, 497 (1995).Google Scholar
10. Rosenblum, S. S., Weber, W. H., and Chamberland, B. L., Phys. Rev. B 56, 529 (1997).10.1103/PhysRevB.56.529Google Scholar
11. Huang, Y. S. and Pollak, Fred H., Solid State Commun. 42, 921 (1982).10.1016/0038-1098(82)90930-9Google Scholar
12. Katiyar, R. S., J. Phys. C 16, 1087 (1970); ibid 3, 1693 (1970).10.1088/0022-3719/3/5/022Google Scholar
13. Porto, P. S., Fleury, P. A., and Damen, T. C., Phys. Rev. 154, 522 (1967).10.1103/PhysRev.154.522Google Scholar
14. Kotz, R., Appl. Surf. Sci. 47, 109 (1991).Google Scholar
15. Lewerenz, H. J., Stucki, S., and Kotz, R., Surf. Sci. 126, 463 (1983).10.1016/0039-6028(83)90744-6Google Scholar
16. Kim, K. S. and Winograd, N., J. of Catal. 35, 66 (1974).Google Scholar
17. Bhaskar, S., Majumder, S. B., Dobal, P. S., Katiyar, R. S. and Krupanidhi, S. B., J. Appl. Phys. (submitted).Google Scholar