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Characterization of the Si/Diamond Interface
Published online by Cambridge University Press: 25 February 2011
Abstract
Auger spectroscopy is used to determine the bonding states of carbon in the interfacial region between silicon and PECVD diamond films. SiC and sp2-hybridized carbon are observed. We suggest a possible growth sequence for diamond films to account for the interfacial layer.
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- Copyright © Materials Research Society 1992