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Characterization of thin Chemical/Native Oxides on Si (100) by Auger and Angle-Resolved XPS

Published online by Cambridge University Press:  21 February 2011

Eddie D. Pylant ,
Carolyn F. Hoener ,
Mark F. Arendt  and
Bob Witowski
Eddie D. Pylant
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Carolyn F. Hoener
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Mark F. Arendt
Affiliation:
University of Texas Department of Chemistry, Austin, TX 78712
Bob Witowski
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
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Abstract

Chemical/native oxides grown on Si(100) after several standard wet cleans are characterized by Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS), and Auger Electron Spectroscopy using sputter depth profiles. Target Factor Analysis (TFA) was used to separate the Si LVV Auger peak into three components identified by their lineshapes and positions as Si, SiO2, and SiOx- Auger depth profiles were used to quantify the thickness of the oxides, the depth distribution, and amount of SiOx in the interface region. ARXPS was used to study the chemical state distribution in the native oxides as a function of depth. The depth distribution function from the Auger data was converted to an angle-resolved format for direct comparison to the angle-resolved XPS data. With this comparison, the SiOx lineshape is correlated to a 3:1 mixture of Si 3+ and Si 2+ oxidation states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 99
Copyright
Copyright © Materials Research Society 1994

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References

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