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The Charge Carriers Transport Mechanism Through the Interface Layer of the p-GaSe(Cu)/n+GaAs Heterojunctions

Published online by Cambridge University Press:  01 February 2011

Elmira I. Cuculescu  and
Mihail I. Caraman
Elmira I. Cuculescu
Affiliation:
elmira_cuculescu@yahoo.com, Moldova State University, Physics, 60 A. Mateevici str., Chisinau, MD 2009, Moldova, +373 22 577742, +373 22 244248
Mihail I. Caraman
Affiliation:
mcaraman@mail.md, University of Bacau, Engineering, 157 Calea Marasesti, Bacau, 600115, Romania
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Abstract

The photoelectrical properties of p-GaSe(Cu)/n-GaAs heterojunctions obtained by optically contacting the components and by thermal evaporation of GaSe, have been studied. The rectification factor for optically contacted heterojunctions is ∼2·102 at 5 V, and the current flow is determined by diffusion mechanism. The diffusion and recombination through the interface defects mechanisms determine de current flow for heterojunctions formed by GaSe evaporation.

Keywords

optoelectronicelectrical propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-18
Copyright
Copyright © Materials Research Society 2007

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