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Chemical Kinetics of Silicon-Rich Oxide Growth in an LPCVD Reactor

Published online by Cambridge University Press:  25 February 2011

C. H. Lam  and
K. Rose
C. H. Lam
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, New York 12181
K. Rose
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, New York 12181
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Abstract

The chemical kinetics of Silicon Rich Oxide (SRO) growth in a N2O-SiH4 LPCVD reactor has been studied at deposition temperatures from 610 to 680°C and pressures from 0.4 to 0.5 torr. We can produce SRO films with a wide spectrum of input reactant ratios γ = [N2O]/[SiH4] = 1 to 40. The dependence of film composition on γ changes dramatically in a region around γ = 2.

Growth for γ < 2 is consistent with the chemical kinetics of SIPOS growth. Growth for γ > 20 can be explained by oxidation of silicon in the bulk of the growing SRO film. We can explain growth from γ ≈ 4 to 20 by considering the chemical kinetics of possible binary surface reactions which may produce Si-Si or Si-O bonds. This allows us to accurately model the dependence of SRO growth rate in this region as a function of γ, pressure, and deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 281
Copyright
Copyright © Materials Research Society 1989

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References

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