Article contents
A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity
Published online by Cambridge University Press: 01 February 2011
Abstract
The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2002
References
- 3
- Cited by