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Comments on Electron and Hole Transport in the Band Tail States of Amorphous Silicon at Low Temperatures
Published online by Cambridge University Press: 25 February 2011
Abstract
Recent experimental results on the low temperature drift mobility in amorphous silicon are examined on the basis of the approach to hopping transport developed by Silver and Bässler. It is shown on general grounds that the main features of the experimental results cannot be explained by a purely exponential tail state distribution, but are consistent with the distribution used by Spear and Cloude (1988) in model calculations.
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- Copyright © Materials Research Society 1989
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