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Compamson in the Growth and Properties of rf Sputtered μc-Si:H and Glow Discharge-Chemical Vapor Deposited μc-Si:H Films
Published online by Cambridge University Press: 15 February 2011
Abstract
Properties of μc-Si:H films grown by rf sputtering and by glow discharge-chemical vapor deposition (GD-CVD) using diluted-hydrogen and hydrogen-atom-treatment method were compared employing TEM, X-ray diffraction, Raman scattering and FT-IR. The films deposited by both methods all exhibited comparable grain sizes in the range of 10–18 nm. and showed the same tendency in almost all the Measurements.
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- Copyright © Materials Research Society 1994