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Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain
Published online by Cambridge University Press: 10 February 2011
Abstract
Anisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.
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- Copyright © Materials Research Society 1998