Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-17T15:47:31.921Z Has data issue: false hasContentIssue false

Computer Simulations of the Self-Organized 3-D Islanding in Epitaxial Thin Film Systems

Published online by Cambridge University Press:  10 February 2011

Y. W. Zhang*
Affiliation:
Institute of Materials Research and Engineering, Singapore, 117602, yw-zhang@imre.org.sg
Get access

Abstract

3-D computer simulations were carried out to investigate the effects of surface energy anisotropy and initial surface roughness on the self-organization of 3-D islands in epitaxial thin film systems. Under the present scheme, the driving force for surface diffusion is the gradient of surface chemical potential, which includes strain energy and surface energy. The simulations demonstrate that the typical sequence of surface evolution is from an initial random surface to a rippled surface, then to irregular islands and then to self-organized islands. Whether the final islands are regular or not depends on both the form of surface energy anisotropy and initial surface roughness. However, the stability and shape transition of the epitaxially strained islands are associated with the form of surface energy anisotropy. The comparisons between the simulations and various experiments were also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Cullis, A.G., Robbins, D.J., Pidduck, A.J. and Smith, P.W., J. Crystal Growth 123, 333(1992).Google Scholar
2.Mo, Y.-W., Savage, D.E., Swartzentruber, B.S. and Lagally, M.G., Phys. Rev. Lett. 65, 1020(1990).Google Scholar
3. G. Medeiros-Ribeiro, Bratkovski, A.M., Kamins, T.I., Ohlberg, D.A.A. and Williams, R.S., Science 279, 353(1998).Google Scholar
4.Ross, F.M., Tersoff, J. and Tromp, R.M., Phys. Rev. Lett. 80, 984(1998).Google Scholar
5.Floro, J.A., Chason, E., Twesten, R.D., Hwang, R.Q. and Freund, L.B., Phys. Rev. Lett. 79, 3946(1997).Google Scholar
6.Ozkan, C.S., Nix, W.D. and Gao, H., Appl. Phys. Lett. 70, 2247(1997).Google Scholar
7.Shchukin, V.A., Ledentsov, N.N., Koev, P.S. and Bimberg, D., Phys. Rev. Lett. 75, 2968(1995).Google Scholar
8.Daruka, I. and Barabasi, A.-L., Phys. Rev. Lett. 79, 3708(1997).Google Scholar
9.Kukta, R.V. and Freund, L.B., J. Mech. Phys. Solids 45, 1835(1997).Google Scholar
10.Spencer, B.J. and Tersoff, J., Phys. Rev. Lett. 79, 4858(1997).Google Scholar
11.Daruka, I., Tersoff, J. and Barabasi, A- L., Phys. Rev. Lett. 82, 2753(1999).Google Scholar
12.Tersoff, J. and Tromp, R.M., Phys. Rev. Lett. 70, 2782(1993).Google Scholar
13.Chiu, C.H., Appl. Phys. Lett. (in press).Google Scholar
14.Zhang, Y.W., Phys. Rev. B 60, 13325(1999).Google Scholar
15.Gao, H. and Nix, W.D., Ann. Rev. Mater. Sci. 29, 173(1999).Google Scholar
16.Gai, Z., Zhao, R. G., Ji, H., Li, X., and Yang, W. S., Phys. Rev. B 56, 12308(1997).Google Scholar
17.Leo, P.H. and Sekerka, R.F., Acta metall. 37, 3119(1989).Google Scholar
18.Zhang, Y.W., Bower, A.L., Xia, L. and Shih, C.F., J. Mech. Phys. Solids 47, 173(1999).Google Scholar
19.Zhang, Y.W. and Bower, A.L., J. Mech. Phys. Solids 47, 2273(1999).Google Scholar