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Contact Reactions at Thin Film Aluminium/Transition Metal Interfaces

Published online by Cambridge University Press:  21 February 2011

Bernd Schuhmacher  and
Uwe Köster
Bernd Schuhmacher
Affiliation:
University of Dortmund, Dept. of Chemical Engineering, D-4600 Dortmund 50, F.R.Germany
Uwe Köster
Affiliation:
University of Dortmund, Dept. of Chemical Engineering, D-4600 Dortmund 50, F.R.Germany
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Abstract

Contact reactions at thin film Al/TM interfaces (TM = W, Cr, Co, Zr and Ta) have been studied by means of cross sectional transmission electron microscopy. In all cases the first phase formed at the interface was the most aluminium-rich compound as given in the correspondent phase diagram: In the case of Al/W, Al/Cr as well as Al/Co growth of Al12W, Al7Cr, and Al9Co2, respectively, with rather smooth, planar morphology has been observed. On the other hand, Al/Zr and Al/Ta contacts exhibit a irregular growth morphology of Al3Zr, and Al3Ta, respectively.

In addition, precipitation behaviour of rapidly solidified supersaturated Al(TM) solid solutions upon thermal annealing has been studied, in order to get a better insight on preferred orientation relationships between aluminium and the aluminides as well as on the influence of defects, e.g. grain boundaries.

Based on the observed morphologies and orientation relationships a model will be proposed for the different modes of interfacial reactions, i.e. with planar or irregular growth morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 323
Copyright
Copyright © Materials Research Society 1990

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