Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-22T19:40:30.259Z Has data issue: false hasContentIssue false

Cubic Boron Nitride Prepared by an ECR Plasma

Published online by Cambridge University Press:  16 February 2011

Y. Osaka
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
M. Okamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
Y. Utsumi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
Get access

Abstract

A number of deposition techniques for cubic BN films from the vapor phase at low pressures have been proposed. We show that the essential factor for creating cubic BN films is a negative self-bias applied to the substrate. The optical and mechanical properties of the deposited films are characterized by reflectance and stress measurements, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wentrof, R. H. Jr.: J. Chem. Phys. 34,809(1961).Google Scholar
2. Halverson, W. and Quinto, D. T.: J. Vac. Sci. Technol. A3,2141(1985).Google Scholar
3. Inagawa, K., Watanabe, K., Ohsone, H., Saitoh, K. and Itoh, A.: Proc. 10th Syrmp. on Ion Sources and Ion-Assisted Technology 1986 (The Research Group of Ion Engineering and Ion Beam Engineering Experimental Laboratory, Kyoto University, Tokyo, 1986) p.381.Google Scholar
4. Satou, M. and Fujimoto, F.: Jpn. J. Appl. Phys. 22,L171(1983).Google Scholar
5. Szmidt, J., Jakubowski, A., Michalski, A. and Rusek, A.: Thin Solid Films 110, 7(1983).Google Scholar
6. Weissmantel, C., Bewilogua, K., Breuer, K., Dietrich, D., Ebersbach, U., Erler, H. J., Rau, B. and Reisse, G.: Thin Solid Films 96,31(1982).Google Scholar
7. Zhou, P. F., Mori, T. and Namba, Y.: Shinku 28,581(1985) [in Japanese].Google Scholar
8. Chayahara, A., Yokoyama, H., Imura, T. and Osaka, Y.: Proc.8th Int. Coni. on Plasma Chemistry, Tokyo, 1987, S608 (International union of pure and applied chemistry, Tokyo, 1987) p.2440.Google Scholar
9. Chayahara, A., Yokoyama, H., Imura, T. and Osaka, Y.: Appl. Surf. Sci. 33/34,561 (1988).Google Scholar
10. Geick, R., Perry, C. H., and Rupprecht, G.: Phys. Rev. 146,543(1966).Google Scholar
11. Gielisse, P. J., Mitra, S. S., Plendl, J. N., Griflis, R. D., Mansur, L. C., Marshall, R. and Pascoe, E. A.: Phys. Rev. 155,1039(1967).Google Scholar
12. Harrison, W. A.: Electronic Structures and the Properties of Solids (W. H. Freeman, & Co. San Francisco, 1980) p. 108.Google Scholar
13. Kleinman, L. and Philips, J. C.: Phys. Rev. 117,460(1960).Google Scholar
14. Bassani, F. and Yoshirnine, M.: Phys. Rev. 130,20(1963).Google Scholar
15. Wief, D. R. and Keown, R.: J. Chem. Phys. 47,3113(1967).Google Scholar
16. Hemstreet, L. A. Jr. and Fong, C. Y.: Phys. Rev. B6,1464(1972).Google Scholar
17. Tasay, Y. F., Vaidyanathan, A. and Mitra, S. S.: Phys. Rev. B19,5422(1979).Google Scholar
18. Zunger, A. and Freeman, A. J.: Phys. Rev. B17,2030(1978).Google Scholar
19. Prasad, C. and Dubey, J. D.: Phys. Status Solidi (b) 125,629(1984).Google Scholar
20. Park, K. T., Terakura, K. and Hamada, N.: J. Phys. C: Solid State Phys. 20, 1241(1987).Google Scholar
21. Chrenko, R. M.: Solid State Commun. 14,511(1974).Google Scholar
22. Fomichev, V. A. and Rumsch, M. A.: J. Phys. Chem. Solids 29,1015(1968).Google Scholar
23. Okamoto, M., Yokoyama, H. and Osaka, Y.: Jpn. J. Appl. Phys. 29,930(1990).Google Scholar
24. Okamoto, M., Utsumi, Y. and Osaka, Y.: Jpn. J. Appl. Phys. 29,L1004(1990).Google Scholar
25. Padlushek, P., and Ch., Hopel: Thin Solid Films 110, 291(1983).Google Scholar