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Deep-Penetration Mechanism of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructure Investigated by In Situ Hall Measurement

Published online by Cambridge University Press:  25 February 2011

Toshihiko Kanayama ,
Yukihiro Takeuchi  and
Yoshinobu Sugiyama
Toshihiko Kanayama
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki 305, Japan.
Yukihiro Takeuchi
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki 305, Japan.
Yoshinobu Sugiyama
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki 305, Japan.
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Abstract

Two-dimensional electron gas 60–120-nm deep from the surface was irradiated with 10-keV Ar ions (projected range = 8.8 nm) and resulting change in the mobility was analyzed. Defect distribution thus obtained is exponential in depth with the larger penetration length for the lower irradiation temperature. In-situ Hall measurements revealed that the mobility decreases simultaneously with the irradiation at 90 K. Consequently, the deep penetration of defects is concluded to be mainly due to the ion channeling. Results of iso-chronal annealing indicate that thermal diffusion of the defect that affects the mobility takes place at around 340–400 K, whereas the mobility starts to recover at ∼120 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 87
Copyright
Copyright © Materials Research Society 1993

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References

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