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Defect Engineering in CCD Image Sensors

Published online by Cambridge University Press:  01 February 2011

William C. McColgin ,
Lingadahalli G. Shantharama  and
James P. Lavine
William C. McColgin
Affiliation:
Digital and Applied Imaging, Image Sensor Solutions, Eastman Kodak Company Rochester, NY 14650-2008 U.S.A.
Lingadahalli G. Shantharama
Affiliation:
Electronic Imaging Materials, Hard Copy and Display Technology Division, Eastman Kodak Company Rochester, NY 14650-2015 U.S.A.
James P. Lavine
Affiliation:
Digital and Applied Imaging, Image Sensor Solutions, Eastman Kodak Company Rochester, NY 14650-2008 U.S.A.
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Abstract

Defect engineering principles are integral to the design and manufacture of high-quality CCD image sensors. As examples, we describe the use of epitaxial silicon for defect control, hydrogen passivation of interface defects, and several forms of impurity gettering. The high sensitivity of image sensors to contaminants reveals that boron segregation gettering of iron dominates gettering by oxygen precipitates for both fast and slow cooling cycles. We estimate that the gettering efficiency for iron is 99.95%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F5.2
Copyright
Copyright © Materials Research Society 2002

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