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Defect Induced Luminescence from MBE Prepared Si/Si1-xGex Superlattices†
Published online by Cambridge University Press: 25 February 2011
Abstract
We report the first definitive observation of photoluminescence from Si/Si1-xGex superlattice heterostructures. Excitons bound to a deep-level radiation damage center (I1) are observed in a series of low Ge content (x = 0.05) unrelaxed structures. We also present preliminary results on photoluminescence from as-grown narrow period (Si6Ge4) superlattices.
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- Research Article
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- Copyright © Materials Research Society 1990
Footnotes
Supported in part by the U.S. Office of Naval Research under contract N00014-85-C-0868.
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