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Defect Reduction in Mocvd Grown Si/GaAs

Published online by Cambridge University Press:  28 February 2011

M.M. Al-Jassim ,
Takashi Nishioka ,
Yoshio Itoh ,
Akio Yamamoto  and
Masafumi Yamaguchi
M.M. Al-Jassim
Affiliation:
Solar Energy Research Institute, Golden, CO 80401.
Takashi Nishioka
Affiliation:
NTT Optoelectronics Laboratories, Atsugi, Kanagawa 243-01, Japan
Yoshio Itoh
Affiliation:
NTT Optoelectronics Laboratories, Atsugi, Kanagawa 243-01, Japan
Akio Yamamoto
Affiliation:
NTT Optoelectronics Laboratories, Atsugi, Kanagawa 243-01, Japan
Masafumi Yamaguchi
Affiliation:
NTT Optoelectronics Laboratories, Atsugi, Kanagawa 243-01, Japan
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Abstract

The effectiveness of thermal annealing and strained layer superlattices (SLS's) in defect reduction in Si/GaAs structures was studied. The GaAs layers were grown on (100) Si substrates by low pressure MOCVD. They were evaluated by TEM, HREM, EBIC and PL. As-grown layers contained dislocation densities in the 108-109 cm−2 range, depending on the layer thickness. Post-growth and in situ annealing were performed on a wide variety of these structures. TEM examination showed that in situ annealing was more effective as it resulted in confining a large portion of the threading dislocations to the interface region. Furthermore, the interaction of threading dislocations to form closed loops was evident. Additionally, the effect of GaAs/GaInAs and GaInAs/GaAsP SLS's on dislocation bending was investigated. The former SLS, although not lattice matched to GaAs, proved more effective.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 141
Copyright
Copyright © Materials Research Society 1988

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References

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