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DEFECTS IN MBE SILICON

Published online by Cambridge University Press:  28 February 2011

R.M. CHRENKO ,
L.J. SCHOWALTER ,
E.L. HALL  and
N. LEWIS
R.M. CHRENKO
Affiliation:
General Electric Company, Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
L.J. SCHOWALTER
Affiliation:
General Electric Company, Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
E.L. HALL
Affiliation:
General Electric Company, Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
N. LEWIS
Affiliation:
General Electric Company, Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
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Abstract

A study of defects that are observed in Si MBE layers under certain growth conditions is reported. Optical microscopy examinations of unetched and etched layers reveal particle-like defects of micron size, stacking faults, dislocations, and saucer pits. TEM shows interfacial defects of tens of Angstroms size at the substrate-epitaxial layer interface. Reproducible defect densities are given for various in-situ cleaning procedures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 27
Copyright
Copyright © Materials Research Society 1986

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