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Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes

Published online by Cambridge University Press:  03 September 2012

V.E. Kudryashov ,
S.S. Mamakin ,
A.N. Turkin ,
A.E. Yunovich ,
A.N. Kovalev  and
F.I. Manyakhin
V.E. Kudryashov
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: yunovich@scon175.phys.msu.su.
S.S. Mamakin
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: yunovich@scon175.phys.msu.su.
A.N. Turkin
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: yunovich@scon175.phys.msu.su.
A.E. Yunovich
Affiliation:
M.V.Lomonosov Moscow State University, Department of Physics, 119899 Moscow, Russia E-mail: yunovich@scon175.phys.msu.su.
A.N. Kovalev
Affiliation:
Moscow Institute of Steel and Alloys, Leninski Prospect 4, Moscow 117235, Russia
F.I. Manyakhin
Affiliation:
Moscow Institute of Steel and Alloys, Leninski Prospect 4, Moscow 117235, Russia
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Abstract

Changes of properties of green LEDs based on InxGa1-xN/AlyGa1-y/GaN heterostructures were studied during 150÷200 hours at currents J = 30÷80 mA. The radiation intensity at low currents (0.1÷1 mA) is quite sensitive to such an aging, it falls down 10÷100 times. Quantum efficiency and spectral parameters at normal currents (J ≈ 10 mA) change non-monotonically during aging, some degradation is observed after 168 hours. The degradation is observed also after a short (< 1 min) period of reverse current. These phenomena are discussed in terms of under threshold defect's formation and their migration in the space charge region of p-n-heterojunction. Potential fluctuations in the space charge region are quite sensitive to this process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.25
Copyright
Copyright © Materials Research Society 1999

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References

1. Osinski, M., Perlin, P., Eliseev, P.G., Liu, G., Barton, D., MRS Symp. Proc., 449, 1179–1183 (1997).Google Scholar
2. Egawa, T., Ishikawa, H., Jimbo, T., Umeno, M.. Appl. Physics Letters 69(6), 830 (1996).Google Scholar
3. Osinski, M., Barton, D.. Journal of the Korean Physical Societ, 30, S13 (1997).Google Scholar
4. Kovalev, A.N., Manyakhin, F.I., Yunovich, A.E.. MRS Internet J.of Nitride Semic. Res., 3, 52, (1998). http:/ /nsr.mij.mrs.org/3/52.Google Scholar
5. Yunovich, A.E., Kovalev, A.N., Kudryashov, V.E., Manyakhin, F.I., Turkin, A.N.. Mat. Res. Soc. Symp. Proc., 482, 1041, (1998).Google Scholar
6. Kovalev, A.N., Manyakhin, F.I., Kudryashov, V.E., Turkin, A.N., Yunovich, A.E.. Semiconductors, 33, 2, (1999).Google Scholar
7. Yunovich, A.E., Kudryashov, V.E., Mamakin, S.S., Turkin, A.N., Kovalev, A.N., Manyakhin, F.I., Physica status solidi (a), 176, N1, p.125 (1999).Google Scholar
8. Martin, P.S.. Abstr. of The Third Eur. GaN Workshop (EGW3), 36–O, 36, (1998).Google Scholar
9. Lester, S.D., Ludowise, M.J., Killeen, K.P., Perez, B.H., Miller, J.N., Rosner, S.J.. Proc. of The Second Intern. Conf. On Nitride Semiconductors (ICNS'97), F3–5, 510, (1997).Google Scholar
10. Schwegler, V., Kirchner, C., Kamp, M., Ebeling, K., Kudryashov, V.E., Turkin, A.N., Yunovich, A.E., Link, A., Limmer, W.. Phys. Stat. Sol.(a), 176, N1, p.783–786 (1999).Google Scholar
11. Kudryashov, V.E., Turkin, A.N., Yunovich, A.E., Kovalev, A.N., Manyakhin, F.I.. Semiconductors, 33 (4), p.p429–435 (1999).Google Scholar
12. Manyakhin, F.I.. Izvestiya VUZ'ov, Ser. Mater. Electron. Techn., N 4, p. 56–60 (1998) (in Russian).Google Scholar