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Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

Published online by Cambridge University Press:  10 February 2011

E. L. Piner ,
N. A. El-Masry ,
S. X. Liu  and
S. M. Bedair
E. L. Piner
Affiliation:
Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695
N. A. El-Masry
Affiliation:
Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695
S. X. Liu
Affiliation:
Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695
S. M. Bedair
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

InGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 125
Copyright
Copyright © Materials Research Society 1998

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