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Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers

Published online by Cambridge University Press:  21 February 2011

S. Morris ,
D. Lim ,
S.-H. Yang ,
S. Tian ,
K. Parab  and
A. F. Tasch
S. Morris
Affiliation:
University of Texas at Austin, Austin, TX 78712
D. Lim
Affiliation:
University of Texas at Austin, Austin, TX 78712
S.-H. Yang
Affiliation:
University of Texas at Austin, Austin, TX 78712
S. Tian
Affiliation:
University of Texas at Austin, Austin, TX 78712
K. Parab
Affiliation:
University of Texas at Austin, Austin, TX 78712
A. F. Tasch
Affiliation:
University of Texas at Austin, Austin, TX 78712
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Abstract

A 2-D model for boron implantation into (100) silicon through overlying oxide layers has been developed and implemented into the process simulator FLOOPS. This model is both accurate and computationally efficient and shows explicit dependencies on all of the key implant parameters: energy, dose, tilt and rotation angles, oxide layer thickness, mask height, mask edge orientation, and rotation of the wafer during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 27
Copyright
Copyright © Materials Research Society 1996

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References

1 Klein, K., Park, C., and Tasch, A., IEEE Trans. on Elec. Dev. 39, No. 7 (1992).Google Scholar
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3 Park, C., Klein, K., and Tasch, A., Solid-State Electronicss 33, No. 6, pp. 645–650 (1990).Google Scholar
4 Lim, D., Yang, S.-H., Morris, S., and Tasch, A., IEDM ‘93, 12.1.1 (1993).Google Scholar
5 Law, M. E., “FLOODS / FLOOPS Manual,” University of Florida (1993).Google Scholar