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Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium

Published online by Cambridge University Press:  15 March 2011

S. Eguchi ,
C. W. Leitz ,
E. A. Fitzgerald  and
J. L. Hoyt
S. Eguchi
Affiliation:
Microsystems Technology Laboratories, Dept. of EECS, Massachusetts Institute of Technology, 60 Vassar St. Cambridge, MA 02139, USA
C. W. Leitz
Affiliation:
Microsystems Technology Laboratories, Dept. of EECS, Massachusetts Institute of Technology, 60 Vassar St. Cambridge, MA 02139, USA
E. A. Fitzgerald
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave. Cambridge, MA 02139, USA
J. L. Hoyt
Affiliation:
Microsystems Technology Laboratories, Dept. of EECS, Massachusetts Institute of Technology, 60 Vassar St. Cambridge, MA 02139, USA
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Abstract

The diffusion behavior of ion implanted arsenic and phosphorus in relaxed-Si0.8Ge0.2 is investigated. Both dopants exhibit enhanced diffusivities in SiGe compared to those in Si under equilibrium conditions. The ratio of the effective diffusivity in SiGe relative to that in Si is found to be approximately seven for arsenic, and roughly two for phosphorus at high concentrations. Under transient diffusion conditions, arsenic diffusion in SiGe is retarded while arsenic diffusion in Si is enhanced by the ion implant damage. The transient retardation of arsenic diffusion in SiGe is observed at temperatures ranging from 900 to 1050°C. These results suggest that using arsenic, it is possible to form n+/p junctions in relaxed-Si0.8Ge0.2 as shallow as those in Si, by optimizing the implant annealing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A1.7
Copyright
Copyright © Materials Research Society 2002

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