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Direct Kinetic Studies of Silicon Hydride Radicals

Published online by Cambridge University Press:  21 February 2011

Joseph M. Jasinski
Joseph M. Jasinski*
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

Laser-based techniques have been developed to directly study the kinetics of the reactions of the mono-silicon hydride radicals SiH, SiH2 and SiH3. A summary of rate constants obtained from these studies is presented along with a discussion of the implications of these results for present mechanistic models of the PECVD of amorphous hydrogenated silicon from silane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 41
Copyright
Copyright © Materials Research Society 1990

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