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Direct Photo-Imprinting in High Photosensitive Organically Modified Germanosilicate (ORMOGSIL) Glasses

Published online by Cambridge University Press:  15 February 2011

Jae Hyeok Jang ,
Dong Jun Kang  and
Byeong-Soo Bae
Jae Hyeok Jang
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
Dong Jun Kang
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
Byeong-Soo Bae
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
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Abstract

Direct photo-imprinting of both surface relief pattern and refractive index modulation upon the organically modified germanosilicate (ORMOGSIL) glass using its large volume change was performed by ultraviolet exposure. A large refractive index increase up to 10-2 is induced by ultraviolet-induced densification in the ORMOGSIL glasses. The photosensitivity in the ORMOGSIL glass was enhanced by introducing a photo-polymerizable methcrylate group in the glass structure. Also, a surface AFM scans and optical microscope images of unetched sample show that the volume compaction in the ultraviolet illuminated region is associated with periodic pattern inscription.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y5.10
Copyright
Copyright © Materials Research Society 2003

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References

references

1. Weisenbach, L., Zelinski, B. J. J., Roncone, R. L., and Burke, J. J., Opt. Lett. 20, 707 (1995)Google Scholar
2. Zaho, G., Tohge, N., and Nishii, J., Jpn. J. Appl. Phys. 37, 1842 (1998)Google Scholar
3. Kim, D. Y., Tripathy, S. K., Li, L., and Kumar, J., Appl. Phys. Lett. 66, 1166 (1995)Google Scholar
4. Rochon, P., Batalla, E., and Natansohn, A., Appl. Phys. Lett. 66, 136 (1995)Google Scholar
5. Holme, N. C.R., Nikolova, L., Ramanujam, P. S., and Hvilsted, S., Appl. Phys. Lett. 70, 1518 (1997)Google Scholar
6. Bae, B. S., Park, O. H., Charters, R., Luther-Davies, B., and Atkins, G. R., J. Mater. Res. 16, 3184 (2001)Google Scholar
7. Hill, K. O., Fujii, Y., Johnson, D. C., and Kawasaki, B. S., Appl. Phys. Lett. 32, 647 (1972)Google Scholar
8. Hand, D. P., and Russell, P. St. J., Opt. Lett. 15, 102 (1990).Google Scholar
9. Atkins, R. M., and Mizrahi, V., Electron.Lett. 28, 1743 (1992).Google Scholar
10. Sceats, M. G., Atkins, G. R., and Poole, S. B., Annu. Rev. Mater. Sci. 23, 381 (1993).Google Scholar
11. Jang, J. H., Kang, D. J., and Bae, B. S., submitted to Phys. Rev. B Google Scholar
12. Park, O. H., Jung, J. I., and Bae, B. S., J. Mater. Res. 16, 2143 (2001)Google Scholar