Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-21T16:19:43.711Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct writing of ZrO2 and TiO2 nanostructures by ArF lithography

Published online by Cambridge University Press:  17 April 2019

Hassan Ridaoui ,
Ali Dirani ,
Fernand Wieder  and
Olivier Soppera
Hassan Ridaoui
Affiliation:
Institut de Sciences des Matériaux de Mulhouse (IS2M), CNRS LRC 7228, 15 rue Jean Starcky BP 2488, 68057 MULHOUSE Cedex, France Contact: olivier.soppera@uha.fr
Ali Dirani
Affiliation:
Institut de Sciences des Matériaux de Mulhouse (IS2M), CNRS LRC 7228, 15 rue Jean Starcky BP 2488, 68057 MULHOUSE Cedex, France Contact: olivier.soppera@uha.fr
Fernand Wieder
Affiliation:
Institut de Sciences des Matériaux de Mulhouse (IS2M), CNRS LRC 7228, 15 rue Jean Starcky BP 2488, 68057 MULHOUSE Cedex, France Contact: olivier.soppera@uha.fr
Olivier Soppera
Affiliation:
Institut de Sciences des Matériaux de Mulhouse (IS2M), CNRS LRC 7228, 15 rue Jean Starcky BP 2488, 68057 MULHOUSE Cedex, France Contact: olivier.soppera@uha.fr
Get access

Abstract

We achieved the preparation of nanostructures based on negative tone inorganic resists by DUV lithography (193 nm). This entails the preparation of a complex of a transition metal by reaction between the metal alkoxide and a suitable ligand. The reaction was carried out in a solvent. Then, a partial hydrolysis of the complex allowed forming metal-oxides inorganic chains by condensation with good film-forming and photopatterning properties. This step corresponds to the synthesis of multifunctional oligomers that can be crosslinked by DUV irradiation.

We obtained well-defined patterns exhibiting low rugosity with width down to 75 nm. An achromatic interferometer based on an ArF excimer laser was used to write the nanostructures. The sensitivity of the resin at 193 nm is in the order of magnitude of organic photoresists used in the microelectronics industry.

The photoinduced processes were studied with care in order to state the physico-chemical phenomena occurring upon DUV-irradiation. FTIR, XPS and XRD were used for characterizing the material structure after irradiation and thermal treatment. Nanostructures were studied by AFM.

The main interest of this resist is that after irradiation, the material is mainly inorganic. It can even be totally mineralized through a subsequent pyrolysis procedure. The process is compatible with a wide range of chemicals (ZrO2, TiO2…). Using lithographic route, it is possible to obtain such nanostructures on relatively wide surfaces. With this new process, we are targeting applications in microelectronics, optics, photonics, photocatalysis, photovoltaic…

Keywords

nanostructurelithography (deposition)sol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1247: Symposium C – Solution Processing of Inorganic and Hybrid Materials for Electronics and Photonics , 2010 , 1247-C10-07
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Henzie, J., Barton, J. E., Stender, C. L., Odom, T. W. Acc. Chem. Res. 39, 249 (2006)Google Scholar
2. Fan, H. J., Werner, P., Zacharias M. Small 2, 700 (2006)Google Scholar
3. Nie, Z., Kumacheva, E. Nature Mater. 7, 277 (2008)Google Scholar
4. Saifullah, M.S.M., Subramanian, K.R.V., Tapley, E., Kang, D.J., Welland, M.E., Butler, M. Nanotechnology 3 (11), 1587 (2003)Google Scholar
5. Thomas, I.M. SPIE 2288, 50 (1994)Google Scholar
6. Belleville, P., Bonnin, C., Priotton, J.J. J. Sol–gel Sci. Technol. 19, 223 (2000)Google Scholar
7. Belleville, P., Prené, P., Bonnin, C., Beaurain, L., Montouillout, Y., Lavastre, E. SPIE 5250, 196 (2003)Google Scholar
8. Zhang, Q.Y., Shen, J., Wang, J., Wu, G.M., Chen, L.Y. Int. J. Inorg. Mater. 2, 319 (2000)Google Scholar
9. Tian, G.L., Huang, J.B., Wang, T., He, H.B., Shao, J.D. Appl. Surf. Sci. 239, 201 (2005)Google Scholar
10. Soppera, O., Croutxe-Barghorn, C. J. Polym. Sci., Part A: Polym. Chem. 41, 716 (2003)Google Scholar
11. Croutxe-Barghorn, C., Soppera, O., Chevallier, M. Macromol. Mater. Engin. 288(3), 219 (2003)Google Scholar
12. Kintaka, K., Nishii, J., Tohge, N. Applied Optics 39(4), 489 (2000)Google Scholar
13. Ridaoui, H., Wieder, F., Ponche, A., Soppera, O., Nanotechnology, 21, 065303 (2010)Google Scholar
14. Chochos, C.L., Ismailova, E., Brochon, C., Leclerc, N., Tiron, R., Sourd, C., Bandelier, P., Foucher, J., Ridaoui, H., Dirani, A., Soppera, O., Perret, D., Brault, C., Serra, C., Hadziioannou, G. Adv. Mater. 21, 1121 (2009)Google Scholar