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Dislocation Dissociation in the Σ13 Grain Boundary in Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Transmission electron microscopy has been used to study the atomic and dislocation structure of deformed and undeformed Σ13 {510} boundary in Si. It is shown that there are several alternative structures for this boundary, which may be separated by imperfect and partial grain boundary dislocations. It is also shown that the dissociation of crystal lattice dislocations which interact with the boundary during deformation results is far more complicated than simple geometrical models applicable in monatomic materials predicts.
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- Copyright © Materials Research Society 1992