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Dislocation Nucleation in GeSi/Si(100) Strained Epilayers
Published online by Cambridge University Press: 28 February 2011
Abstract
The energetics of dislocation nucleation mechanisms in strained layers are calculated: for strains below 1% nucleation of new dislocations at the surface seems implausible. An experimental TEM study of the first dislocations in lowmismatch GeSi/Si epilayers suggests that dislocations are appearing through a completely novel type of dislocation source. 1/6<114> stacking faults which we observe in unrelaxed films appear to dissociate to emit a glissile dislocation. This source differs from all previous mechanisms in that it occurs in “dislocation-free” material, and a single fault can generate two distinct types of dislocation.
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- Copyright © Materials Research Society 1989