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Dislocation Related D-Band Luminescence; the Effects of Transition Metal Contamination

Published online by Cambridge University Press:  25 February 2011

Victor Higgs ,
E.C. Lightowlers  and
P. Kightley
Victor Higgs
Affiliation:
Physics Department, King’s College London, Strand, London WC2R 2LS, UK
E.C. Lightowlers
Affiliation:
Physics Department, King’s College London, Strand, London WC2R 2LS, UK
P. Kightley
Affiliation:
Plessey Research (Caswell) Ltd, Caswell, Towcester, Northants NN12 8EQ, UK
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Abstract

Photoluminescence measurements have been made on plastically formed silicon, free from metal contamination, with dislocation densities in the range 104-108cm-2. Only after deliberate contamination with Cu, Fe or Ni were the dislocation related D-bands the dominant spectral features observed. TEM analysis has revealed that there are no differences in the dislocation structures before and after contamination and that there is no evidence for precipitation on the dislocations or in their strain fields. The D-band features may, therefore, be due to impurities (metal atoms or point defect complexes) trapped in the strain fields of the dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 57
Copyright
Copyright © Materials Research Society 1990

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References

1 Sauer, R., Weber, J., Stolz, J., Weber, E.R., Kuslers, K.H. and Alexander, H., Appl. Phys. A 36, 1 (1985).Google Scholar
2 Lelikov, S., Rebane, T. and Schreter, G., Inst. Phys. Conf. Series 104, 119 (1989).Google Scholar
3 Weber, J. and Alonso, M.I., Proc. Int. Conf. on the Science and Technology of Defect Control in Semiconductors, Yokohama, September 1989.Google Scholar
4 Drozdov, N.A., Patrin, A.A., Tkachev, V.D., Sov. Phys. JETP. Lett. 23, 597 (1976).Google Scholar
5 Sueaza, M., Sumino, K., Nishina, Y., Jpn. J. Appl. Phys. 21, L518 (1982).Google Scholar
6 Robbins, D.J., Gasson, D.B., Hardeman, R.W., Chew, N.G., Cullis, A.G. and Warwick, C.A., Electrochem. Soc. Proc. 85–7, 57 (1985).Google Scholar
7 Higgs, V., Lightowlers, E.C., Davies, G., Schaffler, F. and Kasper, E., Semicond. Sci. Technol. 4, 593 (1989).Google Scholar
8 Carmo, M.C.Do, Nazare, M.H., Thomaz, M.F., Calao, I., Cerqueira, F. and Davies, G. Mat. Res. Soc. Symp. Proc Vol. 138, 221 (1989).Google Scholar
9 Canham, L.T., Dyball, M.R. and Barraclough, K.G., J.Appl. Phys. 66, 920 (1989).Google Scholar
10 Wessel, K. and Alexander, H., Phil. Mag. 35, 1523 (1977).Google Scholar
11 Kern, W., RCA Review, June 1970, p. 234.Google Scholar
12 Weber, E.R. and Alexander, H., Proc. Int. Sym. on Structure and Properties of Dislocations in Semiconductors, Aussios, 1983, J. Physique 44C (1983).Google Scholar
13 Kimerling, L.C. and Patel, J.R.. Appl. Phys. Lett. 38, 73 (1979).Google Scholar
14 Graff, K., Aggregation Phenomena of Point Defects in Silicon, edited by Sirtl, E. and Gorrissen, J. (The Electrochem. Soc., Pennington, NJ 1981) p.121.Google Scholar