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Correlation of Defects on Dielectric Surfaces with Large Particle Counts in Chemical-Mechanical Planarization (CMP) Slurries Using a New Single Particle Optical Sensing (SPOS) Technique

Published online by Cambridge University Press:  01 February 2011

Edward E. Remsen ,
Sriram P. Anjur ,
David Boldridge ,
Mungai Kamiti  and
Shoutian Li
Edward E. Remsen
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Sriram P. Anjur
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
David Boldridge
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Mungai Kamiti
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Shoutian Li
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
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Abstract

A dual-sensor single particle optical sensing method (SPOS) is described for the measurement of the large particle count (LPC) in fumed silica polishing slurries. LPC values were expressed on a silica sphere-equivalent diameter scale rather than a polystyrene latex-equivalent size basis. Linear correlations between LPC and scratch counts on SiO2 surface films for wafers polished under clean room and table-top CMP conditions are demonstrated. However, these correlations were obtained for a limited set of model slurries; and further investigation will be needed to assess the general applicability of dual-sensor SPOS for oxide scratch defect prediction in CMP slurries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W4.2
Copyright
Copyright © Materials Research Society 2005

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