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Low Temperature Hydrogen Induced Degradation of (Ba,Sr)TiO3 Thin Film Capacitors

Published online by Cambridge University Press:  10 February 2011

J. D. Baniecki ,
C. Parks ,
R. B. Laibowitz ,
T. M. Shaw ,
J. Lian  and
G. Costrini
J. D. Baniecki
Affiliation:
IBM Microelectronics, Semiconductor R&D Center, 1580 Route 52, Hopewell Junction, NY 12533
C. Parks
Affiliation:
IBM Microelectronics, Semiconductor R&D Center, 1580 Route 52, Hopewell Junction, NY 12533
R. B. Laibowitz
Affiliation:
IBM Research Div, Yorktown Heights, NY 10598
T. M. Shaw
Affiliation:
IBM Research Div, Yorktown Heights, NY 10598
J. Lian
Affiliation:
Inf'meon Technologies, 1580 Route 52, Hopewell Junction, NY 12533
G. Costrini
Affiliation:
IBM Microelectronics, Semiconductor R&D Center, 1580 Route 52, Hopewell Junction, NY 12533
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Abstract

We have used electrical characterization and secondary ion mass spectroscopy (SIMS) to investigate the influence of hydrogen or deuterium (H/D) on the degradation of the electrical properties of metal/Ba0.7Sr0.3TiO3/metal (M/BSTO/M) thin film capacitors after forming gas annealing (FGA). Leakage and dielectric relaxation currents increase after FGA at temperatures as low as 23C. SIMS profiling shows that at 23C H/D diffuses through thin film metal electrodes and accumulates at electrode interfaces. The location (top or bottom electrode interface) of H/D accumulation is dependent on the type of electrodes and capacitor structure. The resulting asymmetric distribution of H/D leads to large voltage offsets in the C-V characteristic, asymmetric leakage currents, and increased dielectric relaxation currents. Possible mechanisms for increased leakage and relaxation currents after FGA are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 25
Copyright
Copyright © Materials Research Society 2000

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