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The Dopamt Diffusion Mechanism in Eicimer Laser Induced Molten Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
We have calculated the degree of dopant diffusion which occurs during non-equilibrium incorporation of boron from the silicon surface into the molten silicon induced by a pulsed excimer laser. When a high-power lascr causes the melt front to proceed into the substrate faster than 8 m/s, p+ -doped regions are formed near the surface of the molten silicon because boron atoms cannot diffuse sufficiently fast for the junction depth to reach the maximum melt depth.
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- Copyright © Materials Research Society 1998