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Dopant - Extended Defects Interactions: The Case of Aluminum

Published online by Cambridge University Press:  17 March 2011

Ch. Ortiz ,
D. Mathiot ,
Ch. Dubois ,
D. Alquier  and
R. Jérisian
Ch. Ortiz
Affiliation:
L.M.P., 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France) Laboratoire PHASE-CNRS, 23 rue du Loess, 67037 Strasbourg Cedex 2 (France)
D. Mathiot
Affiliation:
Laboratoire PHASE-CNRS, 23 rue du Loess, 67037 Strasbourg Cedex 2 (France)
Ch. Dubois
Affiliation:
L.P.M./Insa Lyon, 20 rue Albert. Einstein, 69621 Villeurbanne Cedex (France)
D. Alquier
Affiliation:
L.M.P., 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France)
R. Jérisian
Affiliation:
L.M.P., 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France)
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Abstract

We studied the Al redistribution in the vicinity of a well-defined EOR band formed by Ge pre-amorphization. Aluminum was implanted in Si at 3 MeV to a low dose before the preamorphization step in order to localize the as-implanted Al peak away from the EOR band. Rapid thermal annealings were performed in the temperature range [900-1000°C] for times varying from 20 s up to 200 s. The results of this study evidence a clear accumulation of the dopant on the extended defects, indicating a direct trapping mechanism of the dopant by the EOR.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.4
Copyright
Copyright © Materials Research Society 2000

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