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Doping Dependence of Chlorine Incorporation in SiC14-based Microcrystalline Silicon Films
Published online by Cambridge University Press: 01 February 2011
Abstract
For SiCl4-based microcrystalline silicon films the doping dependence of chlorine and hydrogen incorporation was studied. The results reveal a Fermi level dependence with a maximum chlorine (and hydrogen) incorporation for a Fermi level somewhat above midgap. As an explanation, a Fermi level dependence of the chlorine release rate during film growth is considered, similar as valid for hydrogen diffusion and desorption.
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- Copyright © Materials Research Society 2005
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