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Dynamic Annealing and Amorphous Phase Formation in Si, GaAs and AlGaAs Under Ion Irradiation

Published online by Cambridge University Press:  22 February 2011

J.S. Williams ,
H.H. Tan ,
R.D. Goldberg ,
R.A. Brown  and
C. Jagadish
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia
R.D. Goldberg
Affiliation:
Present address: Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada School of Physics, University of Melbourne, Parkville, VIC, 3052, Australia
R.A. Brown
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia School of Physics, University of Melbourne, Parkville, VIC, 3052, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia
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Abstract

Ion damage processes and amorphous phase formation are compared in Si, GaAs and Alx Ga1-x As materials in the critical regime where dynamic defect annealing is strongly competing with ion damage production. It is shown that the nature of residual damage is very strongly dependent on temperature, ion dose and dose rate in this critical regime for both Si and GaAs and that the amorphous phase can be “nucleated” by high levels of extended defects. In Alx Ga1-x As, the amorphous phase is increasingly more difficult to nucleate with increasing Al concentration at LN2 temperature but can be nucleated at sufficiently high implantation doses for all Al concentrations. No dose rate effect is observed for Alx Ga1-x As. This behaviour is discussed in terms of the availability of mobile defects and bonding configurational changes during irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 15
Copyright
Copyright © Materials Research Society 1994

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References

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