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Effect of Abrasive in Cu-CMP Slurry on Global Planarization

Published online by Cambridge University Press:  15 March 2011

Yutaka Nomura ,
Hiroshi Ono ,
Hiroki Terazaki ,
Yasuo Kamigata  and
Masato Yoshida
Yutaka Nomura
Affiliation:
Research & Development Center, Hitachi Chemical Co., Ltd.
Hiroshi Ono
Affiliation:
Research & Development Center, Hitachi Chemical Co., Ltd.
Hiroki Terazaki
Affiliation:
Semiconductor Materials Div., Yamazaki Works, Hitachi Chemical Co., Ltd. 13-1, Higashi-cho 4-chome, Hitachi-shi, Ibaraki-ken 317-8555, Japan
Yasuo Kamigata
Affiliation:
Research & Development Center, Hitachi Chemical Co., Ltd.
Masato Yoshida
Affiliation:
Research & Development Center, Hitachi Chemical Co., Ltd.
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Abstract

We investigated the mechanical effect of an abrasive in an abrasive-free-like (AFL) slurry using CMP evaluation and ζ potential evaluation. The amount of abrasive strongly influenced CMP performance. We found out the optimum amount of abrasive for optimal CMP performance. The ζ potential of the abrasive was positive, and those of the Cu and barrier metal were negative. We discussed a planarization model of the AFL slurry in detail based on the ζ potential results obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 816: Symposium K – Advances in Chemical-Mechanical Polishing , 2004 , K4.5
Copyright
Copyright © Materials Research Society 2004

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