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Effect of C/B Sequential Implantation on the B Acceptors in 4H-SiC

Published online by Cambridge University Press:  21 March 2011

Yoshitaka Nakano ,
Tetsu Kachi ,
Hiroshi Tadano  and
Rajesh Kumar Malhan
Yoshitaka Nakano
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
Tetsu Kachi
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
Hiroshi Tadano
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
Rajesh Kumar Malhan
Affiliation:
Denso Corporation, Komenoki, Nissin, Aichi 470-0111, Japan
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Abstract

We have systematically investigated the effect of C/B sequential implantation on the B-related acceptors and deep levels in 4H-SiC using thermal admittance spectroscopy. With increasing concentration of co-implanted C, the density of deep levels was found to start decreasing and to be completely suppressed for the C and B ratio of 1:1. Moreover, the density and ionization energy of B acceptors were seen to start increasing and lowering, respectively, with increasing C concentration. However, we found that excess C-content leads to the formation of a new complex defect. The C-V results also support the expected increase in the total hole concentration with increasing concentration of the co-implanted C-atoms, which is followed by a decrease in the concentration under C-rich condition. This is in reasonable agreements with the behavior of the B acceptors and deep defect levels. Therefore, the concentration of co-implanted C-atoms is considered to be very sensitive to the formation of the B acceptor levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.32
Copyright
Copyright © Materials Research Society 2001

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References

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