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The Effect of Changing Epitaxial Strain on Colossal Magnetoresistance Thin Films

Published online by Cambridge University Press:  11 February 2011

Darren Dale
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY, 14853
Aaron Fleet
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY, 14853
J.D. Brock
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY, 14853
Y. Suzuki
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY, 14853
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Abstract

We have studied the properties of epitaxial La(1-x)SrxMnO3 (x=0.3, 0.5) epitaxial thin films grown on BaTiO3 and SrTiO3. Significant modifications of properties are observed in magnetization and resistivity versus temperature experiments. These modifications occur at temperatures corresponding to structural phase transitions in the substrate. The x=0.5 composition is particularly sensitive to changes in the epitaxial strain state, exhibiting a direct correlation between changes in strain, magnetization and resistivity. Strain can also be induced in BaTiO3 by the inverse piezoelectric effect, which results in as much as a 13% decrease in the resistivity of the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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