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Effect of Ion-beam Radiation on the Anisotropy of Resistivity in YBa2Cu3O7-δ Thin Films
Published online by Cambridge University Press: 22 February 2011
Abstract
Different behaviors of the normal-state resistivity have been observed in (110)-, (113)- and a-oriented YBa2Cu3O7-δ thin films under 200 keV H+ irradiation. It suggests that the c-axis electrical conduction is very sensitive to nonoxygen point defects and a ”semiconductor-metal” phase transition could be induced at very low densities of these defects.
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- Copyright © Materials Research Society 1994