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Effect of magnetic field on the formation of macroporous silicon: structural and optical properties

Published online by Cambridge University Press:  19 November 2013

E. E. Antunez
Affiliation:
Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210, México.
J. O. Estevez
Affiliation:
Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570, México.
J. Campos
Affiliation:
Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
M. A. Basurto
Affiliation:
Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210, México.
V. Agarwal*
Affiliation:
Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210, México.
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Abstract

The conventional method to fabricate porous silicon with n-type substrates requires light assisted generation of holes used in the electrochemical reaction. Recently, two different methods have been proposed to fabricate some similar structures: Hall effect [1] and lateral electrical field [2]. Hall effect assisted etching involves the application of a perpendicular electric and magnetic field to achieve the concentration of holes at the HF/silicon interface to assist the electrochemical reaction, while the other involves the application of a lateral electrical field across the silicon wafer. In this work, the electrochemical etching of high resistivity n-type silicon wafers under the combined effect of magnetic and lateral electrical field to produce photoluminescent macroporous structures under dark conditions, is reported. A lateral gradient in pore sizes as well as in light emission is observed. Optical and structural properties were studied for their possible applications as a biosensor.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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