Hostname: page-component-7479d7b7d-rvbq7 Total loading time: 0 Render date: 2024-07-13T03:34:07.909Z Has data issue: false hasContentIssue false

The Effect of Structural Defects on the Laser Damage Threshold of KH2PO4 Single Crystals.

Published online by Cambridge University Press:  15 February 2011

S. V. Garnov
Affiliation:
General Physics Institute, Vavilov street 38, Moscow, 117942, Russia
M. I. Kolybayeva
Affiliation:
Institute for Single Crystals, Department of Nonlinear and Electrooptic Single Crystals, Lenin Ave 60, Kharkov, 310001, Ukraine
V. M. Puzikov
Affiliation:
Institute for Single Crystals, Department of Nonlinear and Electrooptic Single Crystals, Lenin Ave 60, Kharkov, 310001, Ukraine
V. I. Salo
Affiliation:
Institute for Single Crystals, Department of Nonlinear and Electrooptic Single Crystals, Lenin Ave 60, Kharkov, 310001, Ukraine
Get access

Abstract

The effect of the crystal structure defects of different origin (dislocations, stresses, impurities, liquid phase inclusions) on the bulk laser damage threshold in big-size KDP crystals has been studied in the present paper. The quantitative dependence of the bulk laser damage threshold value on the internal stresses, density of dislocations and impurity concentration in crystals has been found.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chernov, A.A., and Rashkovich, L.N., J.Crystal Growth, 84, 389 (1987).Google Scholar
2. Belonet, C., Progr.Crystal Growth and Character, 3, 121 (1981).Google Scholar
3. Bhat, H.L., Progr.Crystal Growth and Character, 11, 57 (1985).CrossRefGoogle Scholar
4. Lang, A.R., Acta Cryst. 12, 249 (1959).Google Scholar
5. Singleton, F.M., Cooper, I.F. et al. Appl.Phys.Lett. 52, 857859 (1988).Google Scholar
6. Montgomery, K.E., Milanovich, F.P., J.Appl.Phys. 68, 39793982 (1990).Google Scholar