Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Tung, R. T.
Batstone, J. L.
and
Yalisove, S. M.
1987.
Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100).
MRS Proceedings,
Vol. 102,
Issue. ,
Tung, R. T.
and
Batstone, J. L.
1988.
Control of pinholes in epitaxial CoSi2 layers on Si(111).
Applied Physics Letters,
Vol. 52,
Issue. 8,
p.
648.
Tung, R. T.
and
Schrey, F.
1988.
Epitaxial Silicides: a Summary of Recent Developments.
MRS Proceedings,
Vol. 122,
Issue. ,
Haderbache, L.
Wetzel, P.
Pirri, C.
Peruchetti, J. C.
Bolmont, D.
and
Gewinner, G.
1988.
Epitaxy of CoSi2 on Si (111) at low temperature (≤400 °C).
Applied Physics Letters,
Vol. 53,
Issue. 15,
p.
1384.
Schowalter, Leo J.
1988.
Heteroepitaxy on Silicon by Molecular Beam Epitaxy.
MRS Proceedings,
Vol. 116,
Issue. ,
Tung, R. T.
and
Batstone, J. L.
1988.
Control of epitaxial orientation of Si on CoSi2(111).
Applied Physics Letters,
Vol. 52,
Issue. 19,
p.
1611.
Henz, J.
Ospelt, M.
and
Von Känel, H.
1989.
Growth and characterization of metal/semiconductor superlattices.
Surface Science,
Vol. 211-212,
Issue. ,
p.
716.
Schowengerdt, F. D.
Lin, T. L.
Fathauer, R. W.
and
Grunthaner, P. J.
1989.
Response to ‘‘Comment on ‘Diffusion of Si in thin CoSi2 layers’ ’’ [Appl. Phys. Lett. 5
5, 1804 (1989)].
Applied Physics Letters,
Vol. 55,
Issue. 17,
p.
1804.
Schowengerdt, F. D.
Lin, T. L.
Fathauer, R. W.
and
Grunthaner, P. J.
1989.
Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses.
Journal of Applied Physics,
Vol. 65,
Issue. 9,
p.
3531.
Haderbache, L.
Wetzel, P.
Pirri, C.
Peruchetti, J. C.
Bolmont, D.
and
Gewinner, G.
1989.
Probing the Co coordination at the Si/CoSi2(111) interface by photoemission.
Physical Review B,
Vol. 39,
Issue. 17,
p.
12704.
Schowengerdt, F. D.
Lin, T. L.
Fathauer, R. W.
and
Grunthaner, P. J.
1989.
Diffusion of Si in thin CoSi2 layers.
Applied Physics Letters,
Vol. 54,
Issue. 14,
p.
1314.
Henz, J.
Ospelt, M.
and
Känel, H.
1989.
Heterostructures on Silicon: One Step Further with Silicon.
p.
215.
Adamski, C.
Uffmann, D.
Meiser, S.
Niewohner, L.
and
Schaffer, C.
1990.
Low resistance epitaxial CoSi/sub 2/-contacts for VLSI circuits.
p.
468.
Haderbache, L.
Wetzel, P.
Pirri, C.
Peruchetti, J. C.
Bolmont, D.
and
Gewinner, G.
1990.
Croissance épitaxique de CoSi2 sur Si(111) étudiée par photoémission.
Revue de Physique Appliquée,
Vol. 25,
Issue. 9,
p.
869.
Adamski, C.
Meiser, S.
Uffmann, D.
Niewöhner, L.
and
Schäffer, C.
1990.
Growth and Characterization of Epitaxial CoSi2-Contacts.
MRS Proceedings,
Vol. 181,
Issue. ,
Haderbache, L.
Wetzel, P.
Pirri, C.
Peruchetti, J.C.
Bolmont, D.
and
Gewinner, G.
1990.
Identification of three distinct CoSi2(111)(1×1) surface structures.
Applied Surface Science,
Vol. 41-42,
Issue. ,
p.
257.
Adamski, C.
and
Schäffer, C.
1991.
Growth of CoSi2 on CaF2/Si (111) Heterostructures.
MRS Proceedings,
Vol. 220,
Issue. ,
Bulle-Lieuwma, C.W.T.
1993.
Epitaxial growth of CoSi2/Si structures.
Applied Surface Science,
Vol. 68,
Issue. 1,
p.
1.
Bulle-Lieuwma, C. W. T.
Vandenhoudt, D. E. W.
Henz, J.
Onda, N.
and
von Känel, H.
1993.
Investigation of the defect structure of thin single-crystalline CoSi2 (B) films on Si(111) by transmission electron microscopy.
Journal of Applied Physics,
Vol. 73,
Issue. 7,
p.
3220.