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Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface
Published online by Cambridge University Press: 15 February 2011
Abstract
Phosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.
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- Copyright © Materials Research Society 1993
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