Hostname: page-component-84b7d79bbc-x5cpj Total loading time: 0 Render date: 2024-07-28T22:20:49.889Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of Laser/Energy-Beam Recrystallized Thin Film Silicon-On-Insulator (SOI)

Published online by Cambridge University Press:  21 February 2011

El-Hang Lee  and
D. J. Ruprecht
El-Hang Lee
Affiliation:
Monsanto Electronic Materials Company, P.O. Box 8, St. Peters, MO 63376
D. J. Ruprecht
Affiliation:
Monsanto Electronic Materials Company, P.O. Box 8, St. Peters, MO 63376
Get access

Abstract

Spreading resistance has been measured for various types of grain boundaries formed on graphite heater recrystallized SOI samples (G-SOI) or laser strip beam-recrystallized SOI samples (L-SOI) in order to identify the characteristic relation between the morphological/structural variation of the boundary defects and their electrical transport properties. In general, the resistance values across L-SOI sub-boundaries are higher than those across G-SOI sub-boundaries. TEM analyses reveal evidences of higher degree of crystallographic mismatch (up to 10°) in L-SOI sub-boundaries than that (1 – 2°) in G-SOI sub-boundaries. The measurement also revealed the evidences of counter-doping near the seed areas where the epitaxial growth initiated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 139
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lam, H. W., Tasch, A. F., Jr., and Pinizzotto, R. F., in VLSI Electronics: Microstructure, Vol.4, Academic Press, New York, 1982.Google Scholar
2. Fan, J. C. C., Tsaur, B.-Y. and Geis, M. W., J. Cryst. Growth, 63, 453 (1983).CrossRefGoogle Scholar
3. Lam, H. W., Pinizzotto, R. F., Malhi, S. D. S., and Vaandrager, B. L., Appl. Phys. Lett., 41, 1083 (1982).10.1063/1.93373Google Scholar
4. Tsuo, Y. S., Milstein, J. B., and Surek, T., Mater. Res. Soc. Syrup. Proc., 5, 155 (1982).CrossRefGoogle Scholar
5. Seto, J. Y. W., J. Appl. Phys., 46, 5247 (1975).Google Scholar
6. Tsaur, B.-Y., Fan, J. C. C., Geis, M. W., Silversmith, D. J., and Mountain, R. W., IEEE Elect. Dev. Lett., EDL-3, 79 (1982).Google Scholar
7. Maby, E. W. and Antoniadis, D. A., Appl. Phys. Lett., 40, 158 (1982)Google Scholar
8. Lee, E. H., MRS Meeting, Boston, MA., Nov. 14–17, 1983 Google Scholar
9. Geis, M. W., Smith, H. I., Silversmith, D. J., Mountain, R. W., and Thompson, C. V., J. Electrochem. Soc., 130, 1178 (1982).10.1149/1.2119913CrossRefGoogle Scholar
10. d'Aragona, F. Secco, J. Electrochem. Soc., 119, 948 (1972)Google Scholar
11. Lee, E. H., (Unpublished)Google Scholar
12. Maby, E. W. and Antoniadis, D. A., Appl. Phys. Lett., 40, 691 (1982)CrossRefGoogle Scholar
13. Sze, S. M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.Google Scholar