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Electrical Properties and Defect States of Laser Crystallized Polycrystalline Silicon Films

Published online by Cambridge University Press:  17 March 2011

Tadashi Watanabe ,
Nobuyuki Andoh  and
Toshiyuki Sameshima
Tadashi Watanabe
Affiliation:
Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
Nobuyuki Andoh
Affiliation:
Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Abstract

In this paper, changes in electrical properties of laser crystallized silicon films doped with 8.5×1017-cm−3-phosphorus atoms as a function of laser shot number are investigated. The samples are treated with plasma hydrogenation for 30 sec at 130 Pa at 250 °C and additional H2O vapor heat treatment at 260 °C for 3 hours with 1.3 MPa. The electrical conductivity at room temperature become about 10−6∼10−-5 S/cm as laser shot number increases from 1 to 100. After hydrogenation and additional H2O vapor heat treatment, electrical conductivity remarkably increases to 100∼101S/cm. At laser irradiation of 20 or 50 shots after both treatments, the density of defect at deep level states and tail states are determined 1.15×1017 cm−3 and 5.7×1017cm−3 using an analysis program. Potential barrier height at grain boundary is 0.048 eV. The effective carrier density and carrier mobility are markedly increased up to1017cm−3 and 209 cm2/Vs by hydrogenation and additional H2O vapor heat treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.10
Copyright
Copyright © Materials Research Society 2001

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References

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